ksm n 7468 kersmi electronic co.,ltd. 40 v n - channel mosfet www.kersemi.com 1 description this n - channel mosfet s use advanced trench technology and design to provide excellent rds(on) with low gate charge. it can be used in a wide variety of applications. features 1 ) low gate charge. 2) green device available. 3) advanced high cell denity trench technology for ultra rds(on) 4) excellent package for good heat dissipation. sop - 8 absolute maximum ratings t c =25 ,unless otherwise noted symbol parameter ratings units vds drain - source voltage 40 v vgs gate - source voltage 20 v id continuous drain current - 1 9.4 a continuous drain current - t=100 mj pd power dissipation4 2.5 w tj, tstg operating and storage junction temperature range - 55 to +150 thermal characteristics bvdss rdson id 40 v 15.5m 9.4 a
ksm n 7468 kersmi electronic co.,ltd. 40 v n - channel mosfet www.kersemi.com 2 package marking and ordering information part no. marking package KSMN7468 KSMN7468 sop - 8 electrical characteristics t c =25 unless otherwise noted s ymbol parameter conditions min typ max units off characteristics bv dss drain - sourtce breakdown voltage v ds =0v,i d =250a v i dss zero gate voltage drain current v ds =0v, v ds =32v a i gss gate - source leakage current v ds =20v, v ds =0a 200 na on characteristics v gs(th) gate - source threshold voltage v ds =vds, i d =250a 0.8 v r ds(on) drain - source on resistance 2 v ds =10v,i d =6a m v ds =2.5v,i d =5a --- g fs forward transconductance v ds =5v,i d =12a 27 s dynamic characteristics c iss i nput capacitance v ds =15v,v gs =0v, f=1mhz pf c oss output capacitance rss reverse transfer capacitance switching characteristics t d(on ) turn - on delay time v ds =20v, v gs =10v,r gen =3.3 ns t r rise time ns t d(off) t urn - off delay time ns t f f all time ns q g total gate charge v gs =4.5v, v ds =20v , i d =6a nc q gs gate - sourcecharge nc q gd gate - drain miller charge nc drain - source diode characteristics v sd source - drain diode forwardvoltage 2 v gs =0v,i s =1a 0.8 rr reverse recovery time i f =7a,di/dt=100a/s rr reverse recovery charge symbol parameter ratings units r ? jc thermal resistance ,junction to case1 20 /w r ? ja thermal resistance, junction to ambient1 50
ksm n 7468 kersmi electronic co.,ltd. 40 v n - channel mosfet www.kersemi.com 3 notes: 1. the data tested by surface mounted on a 1 inch 2 fr - 4 board 2oz copper. 2. the data tested by pulse width300us,duty cycle2% 3. the eas data shows max.rating.the test condition is v dd =25v,v gs =10v,l=0.1mh,i as =17.8a 4. the power dissipation is limited by 150 junction temperature. typical characteristics t j =25 unless otherwise noted fig 1. typical output characteristics fig 2. typical output characteristics f ig 3. typical transfer characteristics f ig 4. normalized on - resistance vs. temperature
ksm n 7468 kersmi electronic co.,ltd. 40 v n - channel mosfet www.kersemi.com 4 fig 5. typical capacitance vs. fig 6. typical gate charge vs. drain - to - source voltage drain - to - source voltage fig 7. typical source - drain diode fig 8. maximum safe operating area forward voltage fig 9 . maximum effective transient thermal impedance, junction - to - case
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